JPS5979249A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS5979249A JPS5979249A JP57190545A JP19054582A JPS5979249A JP S5979249 A JPS5979249 A JP S5979249A JP 57190545 A JP57190545 A JP 57190545A JP 19054582 A JP19054582 A JP 19054582A JP S5979249 A JPS5979249 A JP S5979249A
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- positive
- pattern
- negative
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007261 regionalization Effects 0.000 title 1
- 230000005855 radiation Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 6
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims 4
- 150000003457 sulfones Chemical class 0.000 claims 3
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000002904 solvent Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000004132 cross linking Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- WRSDLKTVLDLHOM-UHFFFAOYSA-N [diazido(phenyl)methyl]benzene Chemical compound C=1C=CC=CC=1C(N=[N+]=[N-])(N=[N+]=[N-])C1=CC=CC=C1 WRSDLKTVLDLHOM-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57190545A JPS5979249A (ja) | 1982-10-29 | 1982-10-29 | パタ−ン形成方法 |
| DE19833337315 DE3337315A1 (de) | 1982-10-13 | 1983-10-13 | Zweifach-lichtempfindliche zusammensetzungen und verfahren zur erzeugung bildmustergemaesser photoresistschichten |
| US07/161,213 US4797348A (en) | 1982-10-13 | 1988-02-17 | Method of forming a positive resist pattern in photoresist of o-naphthoquinone diazide and bisazide with UV imaging exposure and far UV overall exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57190545A JPS5979249A (ja) | 1982-10-29 | 1982-10-29 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5979249A true JPS5979249A (ja) | 1984-05-08 |
| JPH0343614B2 JPH0343614B2 (en]) | 1991-07-03 |
Family
ID=16259859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57190545A Granted JPS5979249A (ja) | 1982-10-13 | 1982-10-29 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5979249A (en]) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60263143A (ja) * | 1984-06-01 | 1985-12-26 | ローム アンド ハース コンパニー | 熱安定性重合体像及びその形成方法 |
| JPS62100751A (ja) * | 1985-10-24 | 1987-05-11 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 自己整合パタ−ンの形成方法 |
| JPH01283555A (ja) * | 1988-05-11 | 1989-11-15 | Nippon Telegr & Teleph Corp <Ntt> | パターン形成材料 |
| JPH0285857A (ja) * | 1988-09-22 | 1990-03-27 | Toshiba Corp | 感光性樹脂組成物 |
| JPH10104839A (ja) * | 1996-09-16 | 1998-04-24 | Internatl Business Mach Corp <Ibm> | 低”ｋ”係数ハイブリッド・フォトレジスト |
| JP2005292160A (ja) * | 2003-03-26 | 2005-10-20 | Sumitomo Bakelite Co Ltd | ポジ型感光性樹脂組成物並びに半導体装置及び表示素子 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53116145A (en) * | 1977-03-15 | 1978-10-11 | Agfa Gevaert Nv | Improvement of photoregist material |
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
-
1982
- 1982-10-29 JP JP57190545A patent/JPS5979249A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53116145A (en) * | 1977-03-15 | 1978-10-11 | Agfa Gevaert Nv | Improvement of photoregist material |
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60263143A (ja) * | 1984-06-01 | 1985-12-26 | ローム アンド ハース コンパニー | 熱安定性重合体像及びその形成方法 |
| JPS62100751A (ja) * | 1985-10-24 | 1987-05-11 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 自己整合パタ−ンの形成方法 |
| JPH01283555A (ja) * | 1988-05-11 | 1989-11-15 | Nippon Telegr & Teleph Corp <Ntt> | パターン形成材料 |
| JPH0285857A (ja) * | 1988-09-22 | 1990-03-27 | Toshiba Corp | 感光性樹脂組成物 |
| JPH10104839A (ja) * | 1996-09-16 | 1998-04-24 | Internatl Business Mach Corp <Ibm> | 低”ｋ”係数ハイブリッド・フォトレジスト |
| JP2005292160A (ja) * | 2003-03-26 | 2005-10-20 | Sumitomo Bakelite Co Ltd | ポジ型感光性樹脂組成物並びに半導体装置及び表示素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0343614B2 (en]) | 1991-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0192741A (ja) | ポジ型ホトレジストの画像反転法 | |
| IE50312B1 (en) | Improved positive-working resist materials and their use in a formation of a negative resist pattern on a substrate | |
| JPS6313035A (ja) | パタ−ン形成方法 | |
| JPH01300250A (ja) | フォトレジスト組成物 | |
| JPH0342461B2 (en]) | ||
| JPS5968737A (ja) | ポジ型及びネガ型パタ−ンの同時形成方法 | |
| JPH0627669A (ja) | ネガ型放射線感応性混合物およびそれを使用して製造された放射線感応性記録材料 | |
| JPS5979249A (ja) | パタ−ン形成方法 | |
| JPH01300248A (ja) | フォトレジスト組成物 | |
| EP0113033A2 (en) | Process for forming resist masks | |
| JPH05249681A (ja) | 酸分解性化合物及びそれを含有するポジ型感放射線性レジスト組成物 | |
| JPH02248952A (ja) | 感光性組成物 | |
| JPS5979248A (ja) | 感光性組成物 | |
| JPH01142721A (ja) | ポジ型感光性パターン形成材料およびパターン形成方法 | |
| JPH0143300B2 (en]) | ||
| JPH03200968A (ja) | ポジ型感光性樹脂組成物 | |
| JPH0261640A (ja) | 感光性組成物 | |
| JPH03229255A (ja) | 感光性組成物 | |
| JPH0240658A (ja) | 感放射線組成物及びパターン形成方法 | |
| JPS63298335A (ja) | パタ−ン形成用コントラストエンハンスト材料 | |
| JPH03238458A (ja) | パタン形成法 | |
| JPS63159839A (ja) | 新規なフオトレジスト組成物 | |
| JPH02132443A (ja) | パターン形成材料 | |
| JPH0346659A (ja) | レジスト組成物 | |
| JPH05100439A (ja) | ポジ型感放射線性レジスト用現像液 |